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| 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) 2SK3374 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) High forward transfer admittance: iYfsi = 0.8 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 1 2 1.3 122 1 0.13 150 -55 to150 Unit V V V A A W mJ A mJ C C Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-8M1B Weight: 0.54 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch-a) Max 96.1 Unit C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 203 mH, RG = 25 W, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK3374 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min 3/4 30 3/4 450 2.0 3/4 0.3 3/4 3/4 3/4 3/4 VOUT 3/4 10 9 RL = 400 W 3/4 VDD ~ 200 V 3/4 3/4 VDD ~ 360 V, VGS = 10 V, ID = 1 A 3/4 3/4 70 5 3 2 3/4 3/4 3/4 3/4 nC 30 3/4 15 3/4 ns Typ. 3/4 3/4 3/4 3/4 3/4 3.7 0.7 180 2 20 7 Max 10 3/4 100 3/4 4.0 4.6 3/4 3/4 3/4 3/4 3/4 pF Unit mA V mA V V W S Turn-ON time Switching time Fall time ton 10 V VGS 0V ID = 0.5 A tf Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Qg Qgs Qgd Duty < 1%, tw = 10 ms = Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 1 A, VGS = 0 V IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 350 1.3 Max 1 2 -1.7 3/4 3/4 Unit A A V ns nC Marking K3374 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-09 2SK3374 ID - VDS 1.0 Common source Ta = 25C pulse test 2.0 10 8.0 5.75 6.0 5.5 1.6 10 8.0 ID - VDS 6.25 6.0 Common source Ta = 25C pulse test 0.8 (A) ID ID (A) 0.6 5.25 1.2 5.75 Drain current Drain current 0.4 5.0 4.75 0.8 5.5 5.25 0.2 VGS = 4.5 V 0.4 5.0 VGS = 4.5 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 2.0 Common source VDS = 20 V pulse test 20 VDS - VGS Common source Ta = 25C pulse test 1.6 (V) VDS Drain-source voltage 16 ID (A) 1.2 12 Drain current 0.8 100 0.4 25 Ta = -55C 8 ID = 1 A 0.25 0 0.5 4 0 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID (S) 5 Common source 3 VDS = 20 V pulse test 1 0.5 0.3 Ta = -55C 100 50 Common source RDS (ON) - ID 30 Ta = 25C Pulse test iYfsi Forward transfer admittance Drain-source on resistance RDS (ON) (W) 25 10 0.1 0.05 0.03 5 3 0.01 0.01 0.03 0.1 0.3 1 3 10 1 0.1 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 3 2002-08-09 2SK3374 RDS (ON) - Ta (W) 16 Common source VGS = 10 V pulse test 12 0.5 10 Common source Ta = 25C 3 pulse test IDR - VDS RDS (ON) Drain reverse current IDR (A) 1 Drain-source on resistance ID = 1A 8 0.25 0.3 0.1 10 3 4 0.03 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 0 -80 -40 0 40 80 160 0.01 0 -0.2 -0.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 500 300 5 Vth - Ta Common source VDS = 10 V ID = 1 mA pulse test Gate threshold voltage Vth (V) Ciss 4 (pF) Capacitance C 100 50 30 Coss 10 5 3 Common source VGS = 0 V f = 1 MHz Ta = 25C 0.3 0.5 1 3 5 10 3 2 1 Crss 30 50 100 0 -80 -40 0 40 80 120 160 1 0.1 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 500 Dynamic input/output characteristics Common source ID = 1 A Ta = 25C pulse test VDS 90 300 VDS = 360 V 200 8 12 180 20 (W) (V) 1.6 400 16 PD VDS Drain power dissipation Drain-source voltage 0.8 0.4 100 VGS 4 0 0 40 80 120 160 200 0 0 2 4 6 8 0 10 Ambient temperature Ta (C) Total gate charge Qg (nC) 4 2002-08-09 Gate-source voltage 1.2 VGS (V) 2SK3374 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.003 0.001 0.0005 10 m 100 m 1m 10 m 100 m 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse PDM t T Duty = t/T Rth (ch-a) = 96.1C/W 10 100 Pulse width tw (S) Safe operating area 10 150 EAS - Tch (mJ) Avalanche energy EAS ID max (pulsed) * 1 ID max (continuous) 100 ms * 120 (A) 1 ms * Drain current ID 90 0.1 DC operation Ta = 25C 0.01 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 1 10 60 30 0.001 0.1 VDSS max 100 1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 90 V, L = 203 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-09 2SK3374 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-09 |
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